IT之家 · IT业界 · 10/15/2026, 19:05:48
SK Hynix Unveils 3D FeNAND Analog Compute-in-Memory: Leveraging Ferroelectric Polarization for Efficient AI MAC Operations
SK Hynix has published research on Analog Compute-in-Memory (A-CiM) using 3D FeNAND technology, aiming to reduce data movement and improve energy efficiency by performing MAC operations directly within memory. The approach leverages ferroelectric polarization states to store data and generate multiple current levels per cell, suitable for AI weights, marking a significant step in evolving non-volatile memory towards near/in-memory computing architectures.
SOURCE COVERAGEFull Original Report
10 月 15 日消息，据韩媒 The Elec 今天报道，SK 海力士现已公布 3D FeNAND 实现模拟存内计算（Analog Compute-in-Memory，A-CiM）的研究成果，相关研究已发表于 IEEE 论文。
据介绍，A-CiM 可利用模拟信号直接在存储器执行乘积累加运算（IT之家注：MAC），减少数据搬运、提升处理速度和能效。
3D FeNAND 则利用铁电材料的极化状态存储数据并控制电流。对比之下，传统 3D NAND 采用电荷俘获氮化物（CTN）结构，将电子捕获在氮化物层中。铁电材料的特点是，即使外部电场消失，其内部极化状态仍能保持。
SK 海力士表示，FeNAND 可在单个存储单元内产生多种电流状态，适合 AI 计算所需的权重数据。