ASML and Zeiss Detail Hyper NA EUV Challenges: Focus on Depth of Field for 5nm Half-Pitch Resolution

1 reports archived1 independent sourcesupdated 10/9/2026, 10:29:49

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ASML and Zeiss state that Hyper NA EUV lithography systems with numerical aperture ≥0.75 could enable 5nm 'half-pitch' optical resolution within a decade. The primary technical hurdle is the significantly reduced depth of focus, requiring thinner photoresists and advanced control; however, the 0.75NA design offers superior compatibility with existing cleanrooms and mask infrastructure compared to larger 0.85NA alternatives.

LATEST/ASML and Zeiss state that Hyper NA EUV lithography systems with numerical aperture ≥0.75 could enable 5nm 'half-pitch' optical resolution within a decade. The primary technical hurdle is the significantly reduced depth of focus, requiring thinner photoresists and advanced control; however, the 0.75NA design offers superior compatibility with existing cleanrooms and mask infrastructure compared to larger 0.85NA alternatives.

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IT之家 · IT业界T2·Oct 9, 10:2968 pts
ASML and Zeiss Detail Hyper NA EUV Challenges: Focus on Depth of Field for 5nm Half-Pitch Resolution
Original: ASML & 蔡司：未来 Hyper NA EUV 光刻机主要挑战为更低的可用景深
- Hyper NA EUV (NA≥0.75) targets 5nm half-pitch resolution, expected to launch in ~10 years.
- Key challenge is drastically reduced depth of focus, necessitating improvements in photoresist thickness, wafer flatness, and focus control.
- The 0.75NA approach is more attractive than 0.85NA due to minimal system size increase, maintaining cleanroom compatibility, and allowing reuse of masks and light sources.
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