IT之家 · IT业界 · 10/7/2026, 3:35:14 PM
Samsung HBM4E Passes NVIDIA Validation with 16% Efficiency Gain
Reports indicate Samsung's 12-layer HBM4E memory passed quality validation by NVIDIA and major hyperscalers in late September. Featuring 1c nm DRAM and 4nm Logic Dies, the 48GB stack supports 14-16Gbps pin speeds, claiming a 16% efficiency boost and 14% thermal resistance improvement, though supply contracts remain unconfirmed.
SOURCE COVERAGEOriginal coverage
On October 7, the Korea Economic Daily reported that Samsung Electronics' 12-layer stacked HBM4E memory for its storage business passed quality validation tests by NVIDIA and major hyperscale data center companies in late September. Supply volumes, contract sizes, and shipment timelines with each customer have not yet been finalized.
Samsung Electronics previously shipped samples of its 12Hi HBM4E product in May of this year. Combining a 1c nm DRAM die with a 4nm logic die, the single stack offers a capacity of 48GB, supports pin speeds of 14–16 Gbps, and achieves a 16% improvement in power efficiency and a 14% reduction in thermal resistance.
In response, Samsung Electronics officially stated that it "could not confirm" whether its 12-layer HBM4E products had passed customer quality validation.