Micron Previews G11 NAND: Over 400 Layers, Mass Production in 2027

1 reports archived1 independent sourcesupdated 10/22/2026, 10:05:30

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Micron previewed its G11 NAND flash memory, scheduled for volume production ramp-up in H2 2027. Featuring over 400 layers and wafer-to-wafer bonding, it doubles storage density compared to current 276-layer products and introduces specialized AI-datacenter designs including SLC-based GPU-direct IOPS optimization and bandwidth-optimized variants.

LATEST/Micron previewed its G11 NAND flash memory, scheduled for volume production ramp-up in H2 2027. Featuring over 400 layers and wafer-to-wafer bonding, it doubles storage density compared to current 276-layer products and introduces specialized AI-datacenter designs including SLC-based GPU-direct IOPS optimization and bandwidth-optimized variants.

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IT之家 · IT业界T2·Oct 22, 10:0568 pts
Micron Previews G11 NAND: Over 400 Layers, Mass Production in 2027
- G11 NAND features >400 layers, doubling areal density vs. 276-layer products, with 1.5x I/O speed and >25% lower energy consumption.
- Micron skips the G10 generation, targeting volume production ramp-up in H2 2027.
- Two AI-class data center NAND designs introduced: SLC-based GPU-direct IOPS optimized and bandwidth-optimized (similar to HBF).
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