300 毫米晶圆
Mainstream large-diameter wafer format yielding more dies per wafer to lower unit cost.
Infineon has become the first to process 300mm silicon carbide wafers into power semiconductor devices at full-scale production, using existing silicon equipment at its Villach fab in Austria. The company is advancing its 200mm SiC roadmap and has validated cold-split technology on 12-inch SiC at its Dresden site to cut ingot-to-wafer losses.
Infineon has processed 300mm silicon carbide wafers into functional power devices at its Villach fab, becoming the first company to achieve this in a full-scale semiconductor production environment using existing silicon equipment. The milestone lays the process foundation for scalable, secure SiC supply across automotive, renewable energy, industrial and AI data center applications, with the first processed wafer to be shown at electronica in Munich from 10 November.