SiC

Infineon has become the first to process 300mm silicon carbide wafers into power semiconductor devices at full-scale production, using existing silicon equipment at its Villach fab in Austria. The company is advancing its 200mm SiC roadmap and has validated cold-split technology on 12-inch SiC at its Dresden site to cut ingot-to-wafer losses.

Infineon has processed 300mm silicon carbide wafers into functional power devices at its Villach fab, becoming the first company to achieve this in a full-scale semiconductor production environment using existing silicon equipment. The milestone lays the process foundation for scalable, secure SiC supply across automotive, renewable energy, industrial and AI data center applications, with the first processed wafer to be shown at electronica in Munich from 10 November.

onsemi has abandoned its planned $2 billion silicon carbide (SiC) production line in Rožnov, Czech Republic, citing changed conditions in the global SiC market. The company said the Czech site remains central to its long-term manufacturing and growth strategy, with existing silicon and SiC chip production, R&D and hiring continuing. The move reflects shifting supply-demand dynamics in power semiconductors and automotive SiC.

Bosch plans to elevate its semiconductor division to an independent business unit by January 2028 while keeping it under the Mobility sector. The company is expanding global capacity through German wafer fabs, US SiC facilities, and Malaysian test centers, targeting approximately €5 billion in semiconductor revenue by 2030.