Infineon to Build World's First 300mm GaN Power Semiconductor Fab

1 reports archived1 independent sourcesupdated 10/27/2026, 17:26:56

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Infineon announced plans to build the world's first 300mm (12-inch) fab for mass production of GaN power semiconductors in Austria, targeting operation by late 2027. The €1.1 billion investment aims to boost chip yield and process efficiency through larger wafer sizes, supported by approved EU state aid.

LATEST/Infineon announced plans to build the world's first 300mm (12-inch) fab for mass production of GaN power semiconductors in Austria, targeting operation by late 2027. The €1.1 billion investment aims to boost chip yield and process efficiency through larger wafer sizes, supported by approved EU state aid.

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IT之家 · IT业界T2Oct 27, 17:26·68 pts
Infineon to Build World's First 300mm GaN Power Semiconductor Fab
- World's first 300mm GaN power semiconductor mass-production fab established in Europe
- 300mm wafers offer 2.3x higher chip yield per wafer compared to 200mm, improving efficiency
- €1.1 billion investment upgrades Infineon's Villach facility, with production expected by late 2027
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