Infineon Fabricates World's First 300mm SiC Power Device Wafer

Infineon has become the first company to fabricate working power devices on 300mm silicon carbide (SiC) wafers at its Villach fab in Austria, using existing silicon production equipment. This breakthrough validates the commercial feasibility of large-diameter SiC and lays the process foundation for stable, large-scale supply to automotive, renewable energy, industrial, and AI data center applications.

In parallel, Infineon is advancing its 200mm SiC roadmap and has validated a 12-inch SiC cold-split process at its Dresden fab, which improves ingot utilization and reduces processing losses. The first finished wafers will be publicly displayed at electronica in Munich starting November 10. The company notes that 12-inch SiC is still in the validation phase, with mass production timing to be planned jointly with customers and partners.

Larger wafers are expected to significantly increase die output per wafer and lower the unit cost of SiC devices, accelerating SiC adoption in electric vehicles, photovoltaic inverters, industrial power supplies, and AI data center power delivery. By leveraging existing silicon equipment, Infineon can drive large-diameter SiC commercialization without major production line overhaul, further strengthening its leadership in the power semiconductor market.