Rohan Paul (@rohanpaul_ai) · 2026/10/22 13:55:12
三星西安工厂升级至 286 层 NAND 面临出口管制不确定性
三星正将占其全球 NAND 产量约 40% 的西安工厂从 200 层芯片升级为 286 层 V9 芯片，目标在 2027 年底实现月产 4 万片晶圆。尽管三星称此举符合美国出口规则且未增加产能，但美国商务部此前仅批准维持运营而非技术升级，SK 海力士也在推进类似的高层数 NAND 研发与生产，双方均处于监管灰色地带。
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Samsung is converting its Xian plant, which produces about 40% of its global NAND, from roughly 200-layer chips to 286-layer V9 chips under an internal project called “Monami”. That conversion aims for 5,000 wafers a month in December and 40,000 wafers a month by December 2027 SK Hynix wants to lift its Dalian plant from 192-layer NAND to 240 layers or more, and one person says it is already authorised to make chips up to 240 layers there. SK Hynix may also seek US permission for research on 300-plus-layer chips at Dalian, work meant to prepare for possible NAND production in the US. Both companies say the upgrades are happening in consultation with Washington, yet the Commerce Department said in 2025 it would license only continued operation of these plants, not capacity growth or technology upgrades, and the extent of any new approvals is unknown. Samsung insists the work meets US export rules and serves global customers, including US buyers, without adding production capacity or new facilities.